Researchers from IBM demonstrate 200mm wafer-scale graphene devices, graphene FETs and RF passives, processed entirely in a standard silicon fab. Key to this work was building a gate dielectric on the inherently inert surface; to solve this, Si wafers were built with predefined embedded gate structures, upon which were transferred CVD-fabricated graphene layers. The end result, a proof-of-concept frequency doubler, demonstrated ~25dB conversion gain at 2GHz, which was seen constant from 25-200°C -- indicating the n- and p-transconductance are temperature-independent within that range, which is a new finding for CVD graphene-based devices. [Paper #2.2: "Graphene Technology with Inverted-T Gate and RF Passives on 200mm Platform"]
First slide: Top 10 slides from IEEE IEDM 2011
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