July 27, 2012 -- At Nanya Technology’s July 18 investor conference, SVP Pei-Ing Lee, PhD, showed prototypes of a 8Gb quad-die package (QDP) DDR3 based on through silicon via (TSV) 3D IC technology. The 8Gb QDP DDR3 has four stacked 2Gb DDR3 dies. Nanya indicated that volume production of TSV-based QDP DRAM mainly for use in mobile or high-speed computing devices will begin in 2013 or 2014.
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| Figure 1. Product status: 3D IC at Nanya. |
In addition, Nanya has been cooperating with Micron Technology to develop 30nm 4Gb DDR4 and will sample low-power DDR4 RDIMM and LRDIMM in Q3 2012, for use in high-end servers. Production is scheduled to kick off in 2013. Future DDR4 will use TSV to fabricate LRDIMM at 128Gb.
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| Figure 2. Nanya’s DDR4 roadmap. |
Dr. Phil Garrou is a contributing editor to Solid State Technology and author of our 
Insights from the Leading Edge blog, which recently surpassed 100 entries. He operates Microelectronic Consultants of North Carolina and is also senior consultant on advanced packaging with Yole Developpement, an analysis firm for microelectronics and related industries.
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