July 11, 2012 - Marketwire - SEMICON West -- Semiconductor test probe card maker MicroProbe introduced current-carrying capability of >1A/probe in 90µm-pitch full-grid array configurations of its Vx vertical MEMS probe card for wafer-level test.
The enhanced CCC makes the probe card more robust to transient high current events -- a benefit that drives higher wafer test cell uptime and better overall wafer test efficiency. It prevents probe burns from transient current in a single probe exceeding the steady state average current expected from a given IC design. The CCC breakthrough enables customers to shrink their IC probe pitches below 130-150µm without a drop in production efficiency.
MicroProbe's Vx products address today's SoC probe challenges with MEMS-based probes for sub-90µm pitch, a composite (multi-material) probe structure that allows for independent optimization of probe metallurgy choices for both electrical and mechanical characteristics, and a heterogeneous array option that allows for mixed probe choices to test different parts of the chip.
MicroProbe executives will discuss the breakthrough at SEMICON West Test Vision 2010. The event takes place July 11-12 at the San Francisco Marriott Marquis Hotel.
MicroProbe provides advanced Systems-on-Chip (SoC) probe cards to global semiconductor manufacturers. For more information, visit www.microprobe.com.
Check out Solid State Technology’s coverage of SEMICON West 2012!
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