May 23, 2012 - BUSINESS WIRE -- Mitsubishi Electric Corporation (TOKYO:6503) developed a prototype forced-air-cooled three-phase 400V output inverter with all silicon carbide (SiC) power modules that has a power density of 50kVA per liter.
Mitsubishi Electric developed low resistance and higher power density by directly bonding power semiconductor chip leads to the main terminals, eliminating the use of conventional high-resistance aluminum lead wires. The module’s chips include a SiC metal oxide semiconductor field effect transistor (MOSFET) and SiC schottky barrier diode (SBD). It is rated at 1,200V/300A.
The power semiconductors are also low-loss/resistance to boost current density. Mitsubishi Electric therefore applied high-speed protection circuits to prevent a large destructive current during short circuits. The SiC-MOSFET has a built-in current sensor function and a high-speed short-circuit-protection circuit.
Mitsubishi Electric created the all-SiC module because SiC has a critical electric field for breakdown that is about 10x higher than silicon and enables reduced power loss, contributing to lower carbon dioxide emissions and reducing the need for cooling equipment and added bulk to the system. Mitsubishi Electric is pursuing other methods to miniaturize and improve power modules as well.
Mitsubishi Electric Corporation (TOKYO:6503) manufactures, markets and sells electrical and electronic equipment used in information processing and communications, space development and satellite communications, consumer electronics, industrial technology, energy, transportation and building equipment. For more information visit http://www.MitsubishiElectric.com
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